NDLI: Magnetron reactive ion etching for GaAs IC manufacturing technology

Content Provider	IEEE Xplore Digital Library
Author	Namaroff, M. Sasserath, J. Meyyappan, M. McLane, G. Lee, H.S. Cole, M.W.
Copyright Year	1991
Description	Author affiliation: Materials Research Corp., Orangeburg, NY, USA (Namaroff, M.; Sasserath, J.)
Abstract	A report is presented on the development of magnetron-enhanced reactive ion etching (MIE) processes suitable for GaAs IC manufacturing technology. MIE is attractive for implementation in device fabrication efforts as it provides high etch rates and low residual damage. Processes for via hole etching and other applications, such as gate recess, are reported. Via etching was successfully accomplished with SiCl/sub 4/ and Cl/sub 2/. Control of side wall angle and selectivity was achieved through variation of process pressure. Processes suitable to etch fine device features were examined using two different plasmas, SiCl/sub 4/ and BCl/sub 3/. The residual damage to the wafer was assessed using transmission electron microscopy and Schottky diode characteristics. The damage was found to be extremely low for both etch gases.<>
Starting Page	297
Ending Page	300
File Size	315770
Page Count	4
File Format	PDF
ISBN	078030196X
DOI	10.1109/GAAS.1991.172696
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-10-20
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Plasma properties Plasma applications Schottky diodes Manufacturing processes Transmission electron microscopy Gallium arsenide Pressure control Etching Plasma devices
Content Type	Text
Resource Type	Article

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