NDLI: Fully ion implanted planar GaAs E-JFET process

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Plenary session—Invited papers

A review of guided wave optical circuit technology

Photovoltaic materials and devices for terrestrial solar energy applications

Session 2 Integrated circuits — MOSFET IC modeling

Generalized guide for MOSFET miniaturization

VLSI Dynamic nMOS design constraints due to drain induced primary and secondary impact ionization

Characterization of the electron mobility in the inverted <100> Si surface

Lucky-electron model of channel hot electron emission

Characterization of depletion mode MOSFET's

Two-dimensional numerical analysis of normally-off type buried channel MOSFET's

Process statistics of submicron MOSFET's

Modelling inter-electrode capacitances in a MOS transistor

Session 3 Device technology — Dry etching and fine line techniques

Linewidth control in anisotropic plasma etching of polycrystalline silicon

Discharge aspects involved in plasma etching

A very small Schottky barrier diode (SBD) with self-aligned guard ring for VLSI applications

A new lift-off metallization technique for high speed bipolar LSI's

A novel submicron fabrication technique

A novel high speed electron resist

Measurement of two-dimensional profiles near locally oxidized regions

Session 4 Solid state devices — Power transistors

Power switching transistors—A prognosis

Power junction gate field controlled devices

Power MOSFET technology

Power static induction transistor technology

Theoretical comparison of DMOS and VMOS structures for voltage and on-resistance

Design construction, and performance of high power RF VMOS devices

A new VMOS power FET

Session 5 Quantum electronics and energy conversion devices — Laser diodes and infrared LED's

The preparation of low current-threshold infra-red-visible (0.89-0.72µm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy

Triggerable semiconductor lasers

Self-sustained pulsations in semiconductor lasers: Experimental data and theoretical confirmation

Stabilization of aging-induced self-pulsations and the elimination of an initial saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings

A new surface emitting GaInAsP 1.3µm LED with up to threefold enhancement in external quantum efficiency

Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3µm wavelength

LPE-Grown PbSnTe distributed feedback laser diodes with broad continuous tuning range in single mode output

Lattice-matched Pb1-xSnxTe/PbTe1-ySeyDH laser diodes operating to 166K

Session 6 Detectors, sensors, and displays — Silicon imagers and sensors

New solid-state image pickup devices using photosensitive chalcogenide glass film

Profiled silicon photodetector for improved blue color and visible wavelength quantum efficiency

A UV sensitive CCD detector

Deep depletion charge-coupled devices for X-ray and IR sensing applications

Study of the working of ion sensitive F.E.T.

Fabrication and characterization of ZnO piezoelectric films for sensor devices

Session 7 Electron tubes — Fast wave and high power devices

Survey of fast wave tube developments

Gain, saturation, and bandwidth measurements of the NRL gyrotron travelling wave amplifier

A cyclotron maser using a spatially nonlinear electrostatic field

Operating characteristics of a 35GHz gyromonotron

A hybrid inverted coaxial magnetron to generate gigawatt levels of pulsed microwave power

Session 8 Integrated circuits — Advanced bipolar integrated circuits

An integrated circuit composite PNPN diode

A new structure for VLSI bipolar technology

A high speed $I^{2}L$ compatible with high voltage analog devices

Integrated injection logic with extended temperature range capability

A 1 µm bipolar VLSI technology

Sub-nanosecond self-aligned $I^{2}L/MTL$ circuits

Transient response of $I^{2}L$

Session 9 Device technology — Laser and RF annealing, and oxides

Crystalline silicon on insulators by graphoepitaxy

Device and circuit fabrication and physical characterization of pulsed-laser-annealed polysilicon on SiO2and Si3N4

MOS Device and material characterization of laser annealed implanted polysilicon

Application of laser processing for improved oxides grown from polysilicon

RF annealing of radiation-induced electron traps in MOS structures

Electron trapping in oxide grown from polycrystalline silicon

Theoretical justification for the log-normal distribution of time dependent breakdowns in MOS oxides

Session 10 Solid state devices—Power rectifiers and thyristors

High voltage thin layer devices (RESURF devices)

Details of the plasma spreading process in thyristors

2500V, 600A gate turn-off thyristor (GTO)

High power static induction thyristor

Novel gate concept improves performance of light fired thyristor

"Generator - gates" for mutual turn-on of thyristors connected in parallel

Session 11 Solid state devices—Analog microwave devices and integrated circuits

GaAs monolithic analogue circuits

A monolithic GaAs X-band power amplifier

Progress in broad-band GaAs monolithic amplifiers

Status of microwave devices in Japan

Super low noise GaAs MESFET's with a deep recess structure

SOS MESFET processing technology for microwave integrated circuits

Session 12 Electron tubes—Linear beam technology

An ultra-laminar tetrode gun for high duty cycle applications

Convergent electron gun with bonded non-intercepting control grid

Broadband I/J band CW traveling wave tubes

Thermal/Structural analysis of traveling wave tubes using finite elements

Orotron oscillation at 75 GHz

Session 13 Quantum electronics and energy conversion devices—Silicon solar cells

Physics underlying recent improvements in silicon solar-cell performance

Photocurrent and photovoltage mechanisms in silicon Schottky barrier and MOS solar cells

Effects of nonuniform illumination on the performance of silicon concentrator solar cells

Bifacial transcells for luminiscent solar concentration

Two-dimensional analysis of the collection efficiency of vertical multijunction solar cells

Session 14 Device technology—Bipolar technology

A new super high speed ECL compatible $I^{2}L$ technology

BEST (Base Emitter Self-aligned Technology) a new fabrication method for bipolar LSI

An advanced PSA process for high speed bipolar VLSI

High pressure oxidation for isolation of high speed bipolar devices

Nature and mechanism of emitter-collector short in oxide isolated bipolar integrated circuits

The reduction of emitter-collector shorts in a high speed, all implanted, bipolar technology

Session 15 Integrated circuits—MOS memory technology

A high-performance MOS technology for 16K static RAM

Sub 100NS 16K × 1 MOS dynamic RAM using a grounded substrate

An Mo gate 4K static MOS RAM

A 1µm Mo-gate 64-Kbit MOS RAM

High density CMOS processing for a 16K-bit RAM

Variable resistance polysilicon for high density CMOS RAM

Space charge distribution limitation on scale down of MNOS memory devices

Session 16 Solid state devices—GaAs transistors and diodes

GaAs low-noise MESFET prepared by metal-organic chemical vapor deposition

Fabrication and microwave performance of the permeable base transistor

Hyper-thin channel M.B.E. GaAs power F.E.T.s by single atomic plane doping

Proton irradiation effects on GaAs FET's

Transient effects in submicron devices load line dependence

The effect of current bias on the reliability of read-type Schottky barrier GaAs IMPATT's

Millimeter high burnout GaAs Schottky barrier diodes

Session 17 Electron tubes—Slow wave circuits

Measurement of microwave characteristics of helix traveling wave circuits

Stopbands produced by asymmetrical support rod system in helix structures

Study of block-supported helix circuits for high power TWTs

Computer analysis of slow-wave circuits with shaped dielectric loading

Effective use of dispersion shaping in broadband helix TWT circuits

Session 18 Quantum electronics and energy conversion devices—Thin-film and polycrystalline solar cells

Thin film solar cells

Effects of barrier metal, optical concentration, and grain boundary on polysilicon MOS solar cells

A study of poly-Si grain boundaries using Schottky barriers

Characterization of amorphous silicon for low cost MIS solar cells

Space-charge-limited current and capacitance in CuXS/CdS solar cells

A model for the I-V characteristics of electrochemical photovoltaic devices

Session 19 Evening panel discussion

VLSI Applications, technology, and problems in the 1980's

Session 20 Device technology — Contacts and metallization

Refractory silicides for low resistivity gates and interconnects

MoSi2-gate MOSFET's for VLSI

WSi2gate MOS devices

High performance, high density MOS process using polyimide interlevel insulation

High temperature stable metal-GaAs contacts

Effect of emitter contact on current gain of silicon bipolar devices

Session 21 Solid state devices — High-speed device technology

Some theoretical considerations regarding the maximum speed of active devices, with special reference to Josephson junctions

Josephson direct coupled logic (DCL)

Superconducting thin film transformer design for powering Josephson logic

Power supply regulators for Josephson logic

Planar high yield GaAs IC processing techniques

Fully ion implanted planar GaAs E-JFET process

Session 22 Solid state devices — New silicon devices and properties

Optimization, performance and limitations of monolithic polycrystalline silicon distributed RC devices

Design and performance of resistive-gated MOSFETs for analog integrated circuits

A polysilicon base bipolar transistor

Emitter compensation effect

Measurements of heavy doping parameters in processed silicon devices

A new silicon heterojunction transistor using the doped SIPOS

Performance limitations and improved structures for tetrode bucket-brigade devices

Session 23 Detectors, sensors and displays — Displays

AC plasma display device technology overview

New type positive contrast guest-host display

A fast silicon photoconductor-based liquid crystal light valve

Photofabricated thin-film transistor arrays

Session 24 Detectors, sensors and displays — Infrared focal plane arrays

Extrinsic silicon monolithic focal plane arrays a short review

Detector/CCD coupling for hybrid focal planes

The challenge between junction diodes and MIS InSb infrared detectors for monolithic linear arrays

HgCdTe/CdTe mosaics for high temperature operation

InAsSb hybrid imager evaluation

HgCdTe CCD infrared imager arrays

Monolithic HgCdTe charge injection devices

Session 25 Device technology — Advanced device and processing concepts

A novel single-device-well MOSFET gate

A quadruply self-aligned MOS (QSA MOS) a new short channel high speed high density MOSFET for VLSI

A new self-aligned source/drain diffusion technology from selectively oxidized poly-silicon

Performance of downward scaled CMOS/SOS

A high voltage offset-gate SOS/MOS transistor

Compatible VVMOS and NMOS technology for power MOS IC's

A new CML memory cell for high density memory devices

Session 26 Integrated circuits — Advances in CCD technology

The effect of interpoly structure variation on charge transfer efficiency of a buried channel CCD

Virtual phase CCD technology

Junction charge-coupled devices

An ultra high speed GaAs CCD

GaAlAs/GaAs heterojunction Schottky barrier gate CCD

The characteristics of alpha particle effects on 64K CCD's

Radiation hard charge-coupled device operating at 77°K using nitride/oxide gate insulators

Session 27 Detectors, sensors and displays — Detectors

An epitaxial photoconductive detector for high speed optical detection

Near infrared detectors for fiber-optics

LPE-Grown InGaAsP/InP heterojunction bipolar phototransistors

Investigation of microplasmas in InP avalanche photodiodes

Read-out characteristics of the PbS-Si HJ detector

The steady-state behaviour of an extrinsic silicon IR-detector

Properties of long wavelength (Hg, Cd) Te photodiodes in epitaxial films

Simulation techniques for self-consistent treatment of electron dynamics in high power microwave tubes

MOS-accumulation layer solar cell

Electron-beam fabricated GaAs integrated circuits

VLSI: Challenges and choices

Plasma-assisted etching for electron device fabrication

An experimental gyro-TWT

High voltage fast turn-off thyristor

A SOS MESFET microwave amplifier

Life test performance of X-band traveling wave tube amplifiers for defense satellite communication system II (DSCS II)

High efficiency design considerations in coupled-cavity travelling wave tubes

The composite ceramic helix structure, a new slow-wave circuit for traveling-wave tubes

Brazed helix structures for high power TWT's

N-Channel Schottky contacts correlated with GaAs surface structure and treatment

Efficiency of thin film A. C. EL emitter

Hot-electron injection into the oxide in n-channel MOS devices

A novel liftoff process for VLSI using plasma deposition and etching

Switching performance of vertical siemens power MOSFET's

Evidence for bandgap narrowing effects in silicon solar cell performance

Development of stacked multiple bandgap solar cells

Reliability of power GaAs field-effect transistors

Storage characteristics of the Hi-C dynamic RAM cell

Some results on HgCdTe surface passivation

1978 International Electron Devices Meeting

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Fully ion implanted planar GaAs E-JFET process

Content Provider	IEEE Xplore Digital Library
Author	Troeger, G.L. Behle, A.F. Friebertshauser, P.E. Hu, K.L. Watanabe, S.H.
Copyright Year	1979
Description	Author affiliation: McDonnell Douglas Astronautics Company, Huntington Beach, California (Troeger, G.L.)
Abstract	This paper describes the technology for fabrication of GaAs junction field effect transistor integrated circuits. 1 µm gate geometries are produced with $Mg^{+}ion$ implantation which was not possible with Zn diffusion due to lateral spreading. Threshold voltage is adjustable by varying the $Mg^{+}implant$ energy, and shows improved reproducibility. Ring oscillator circuits fabricated with implanted gates demonstrate the high speed and low power capability of this technology.
Starting Page	497
Ending Page	500
File Size	310167
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1979.189666
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1979-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Integrated circuit technology Fabrication FET integrated circuits Geometry Ion implantation Zinc Threshold voltage Implants Reproducibility of results
Content Type	Text
Resource Type	Article

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