NDLI: Space charge distribution limitation on scale down of MNOS memory devices

Content Provider	IEEE Xplore Digital Library
Author	Hampton, F.L. Cricchi, J.R.
Copyright Year	1979
Description	Author affiliation: Westinghouse Electric Corporation, Baltimore, Maryland (Hampton, F.L.)
Abstract	The space charge distribution due to the trapped charge in the nitride of a MNOS memory device, produces a significant modulation of the nitride field outside the space charge region, that can appreciably effect the limit to which these devices can be scaled. Trapped hole and electron space charge distribution in silicon nitride have been derived from steady-state measurements of the change in flat-band voltage vs the maximum field in the nitride. Here, the steady-state density of trapped charge near the nitride-oxide interface $nt^{st}(0),$ trapping length, Xo, and capture cross section, σt, were determined for nitrides deposited with a LPCVD system and an APCVD system. It was observed that the hole and electron trapped charge density increased and the trappings length decreased as the NH3to SiH4ratio is decreased. The trapping length for holes, however, is much greater than for electrons and thus the hole distribution limits the extent to which the nitride can be reduced in thickness. As temperature was increased, the trapping length of electrons increased more rapidly and approached the hole trapping length at 125°C. An approximate scaling limit is defined as the nitride thickness which is twice the charge centroid for a stored charge of $1µC/cm^{2}.$ By changing the NH3to SiH4ratio from 450:1 to 28:1, the nitride thickness scaling limit at 25°C was decreased from 320Å to 190Å. Both the threshold shift and voltage decay rate of the MNOS memory device scale linearly with the reduced nitride thickness over a limited range of stored charge.
Starting Page	374
Ending Page	377
File Size	308982
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1979.189629
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1979-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Space charge Electron traps Charge carrier processes Steady-state Current measurement Charge measurement Space technology Laboratories Silicon Voltage
Content Type	Text
Resource Type	Article

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