NDLI: Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3µm wavelength

Content Provider	IEEE Xplore Digital Library
Author	Yamakoshi, S. Abe, M. Komiya, S. Toyama, Y.
Copyright Year	1979
Description	Author affiliation: Fujitsu Laboratories Ltd., Kawasaki, Japan (Yamakoshi, S.)
Abstract	Accelerated aging at the elevated temperatures was performed, and degradation phenomena were investigated for the high radiance InGaAsP/InP LEDs emitting at the 1.2-1.3µm region. During aging, some of the samples showed dark structures such as DSDs and/or DLDs in the emitting region. DSDs are found to be due to the precipitates. The time required for the appearance of these defects(tDS) was given as functions of the current density(J) and the temperature(T), i.e.,t_{DS} \propto J^{-2} \cdot \exp(1.2eV/kT). Using LEDs without dark structures, accelerated aging at the elevated temperatures of 20-230°C was carried out for over 10,000 hours. The activation energy of homogeneous degradation was obtained to be 0.9-1.0eV. From the results of aging, the extrapolated half-life in excess of 5 × $10^{9}hours$ is estimated at room temperature operation, and these InGaAsP/ InP LEDs are very promising as a source in practical fiber-optical communication systems.
Starting Page	122
Ending Page	125
File Size	634723
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1979.189556
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1979-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Indium phosphide Light emitting diodes Temperature Accelerated aging Optical fiber communication Fiber lasers Light sources Life estimation Substrates
Content Type	Text
Resource Type	Article

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