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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Peckerar, M.C. McCann, D. Blaha, F. Mend, W. Fulton, R. |
| Copyright Year | 1979 |
| Description | Author affiliation: Westinghouse Electric Corporation, Baltimore, Maryland (Peckerar, M.C.) |
| Abstract | In this paper, we describe the fabrication of charge-coupled devices on high resistivity (10-20KΩ-cm) silicon substrates. This material was selected to provide exceptionally deep depletion layers (165µm-254µm deep) for sensing penetrating radiations such as x-rays in the 0.5 to 15KeV range and IR with wavelengths in the vicinity of 1.06. The deep depletion depth prevents recombination loss and allows for a thick device with a large active sensing volume. The high fields (>1000 V/cm) which run through the depletion layer channel charge to the surface, minimize MTF degradation and allow for a back-surface illumination of devices whose thickness is the depletion depth. We present calculations of device performance indicating near unity quantum efficiency for x-rays in the 0.5-15 KeV range. Calculations indicate that for a 254µm thick totally depleted device, diffusive spreading of electron-hole pairs over the entire thickness of the device will be <10µm. We also present data on a 80 element 10 mil thick line array fabricated (buried p-channel) on 15KΩ-cm silicon. We have imaged a slit in the back surface illumination mode using Mn Kα x-rays(penetration depth 28µm). The radiation fluence per frame time of the array was 10 Mn Kα x-ray photons per pixel. |
| Starting Page | 144 |
| Ending Page | 146 |
| File Size | 278727 |
| Page Count | 3 |
| File Format | |
| DOI | 10.1109/IEDM.1979.189563 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1979-12-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | X-ray imaging Silicon Radiative recombination Lighting Fabrication Conductivity Optical imaging Electromagnetic wave absorption Degradation Insulation |
| Content Type | Text |
| Resource Type | Article |
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