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| Content Provider | IEEE Xplore Digital Library | 
|---|---|
| Author | Wood, E.J. Immorlica, A.A. | 
| Copyright Year | 1976 | 
| Description | Author affiliation: Rockwell International/Science Center, Thousand Oaks, California (Wood, E.J.) | 
| Abstract | A monolithic planar beam leaded GaAs mixer diode has been produced by using proton bombardment and a self-aligned metalization technique. Shadow masking of both the proton bombardment beam and the Schottky barrier metalization is used to produce an extremely tight and reproducible device geometry requiring only routine photoresist alignment. Isothermal annealing data has shown that for times in excess of 10,000 hours at normal storage temperatures, the isolation achieved by proton bombardment is not adversely affected. Diodes with a series resistance under 3.0 ohms with a zero bias junction capacitance of 0.06 pF have been realized, giving a zero bias cutoff frequency of 850 GHz. Preliminary RF data on typical devices yield a noise figure of 5.8 dB and a conversion loss of 3.8 at 10.7 GHz. | 
| Starting Page | 90 | 
| Ending Page | 93 | 
| File Size | 271552 | 
| Page Count | 4 | 
| File Format | |
| DOI | 10.1109/IEDM.1976.188992 | 
| Language | English | 
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Publisher Date | 1976-12-06 | 
| Publisher Place | USA | 
| Access Restriction | Subscribed | 
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Subject Keyword | Gallium arsenide Schottky diodes Protons Particle beams Microwave devices Schottky barriers Geometry Resists Isothermal processes Annealing | 
| Content Type | Text | 
| Resource Type | Article | 
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