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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Silard, A. Bodea, M. |
| Copyright Year | 1976 |
| Description | Author affiliation: Polytechnic Institute, Bucharest, Romania (Silard, A.) |
| Abstract | An investigation of the power performance limitations or power devices due to thermal failure has been performed under steady-state and transient conditions. The maximum thermal resistance Rθthat prevents thermal runaway under various blocking conditions was computed as a function of applied voltage VAand of leakage current Io. The dependences Rθ=f (VA,Io) were computed for the worst cases and their validity had been proved by experimental data on diodes, transistors and thyristors. The reliability and performance limitations of devices under transient conditions had been investigated for the most complex case, i.e. the transient thermal response of an amplifying gate thyristor (a.g.t.) during its firing. The analytical model and basic computer procedure are described in detail. A good agreement was found between computed values and experimental data for maximum temperature Tm. |
| Starting Page | 143 |
| Ending Page | 146 |
| File Size | 329994 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/IEDM.1976.189004 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1976-12-06 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermal resistance Thyristors Steady-state Diodes Temperature distribution Voltage Leakage current Temperature dependence Telecommunication computing Firing |
| Content Type | Text |
| Resource Type | Article |
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