NDLI: Reliability consideration of GaAs pHEMT Schottky diodes for mixer applications

Content Provider	IEEE Xplore Digital Library
Author	Chou, Y.C. Leung, D. Biedenbender, M. Fordham, O. Grundbacher, R. Kan, Q. Liu, P.H. Eng, D. Lai, R. Chin, P. Block, T. Oki, A.
Copyright Year	2004
Description	Author affiliation: Northrop Grumman Space Technol., Redondo Beach, CA, USA (Chou, Y.C.; Leung, D.; Biedenbender, M.; Fordham, O.; Grundbacher, R.; Kan, Q.; Liu, P.H.; Eng, D.; Lai, R.; Chin, P.; Block, T.; Oki, A.)
Abstract	Factors affecting reliability performance of GaAs PHEMT Schottky diodes for mixer applications were investigated: the total gate periphery, gate feed cross-sectional area, and the operating gate current. In addition, an elevated two-temperature lifetest at T/sub ambient/ of 265/spl deg/C and 280/spl deg/C was performed to reveal the degradation mechanism of GaAs Schottky diodes. It was found that Ti diffusion into the AlGaAs layer is the primary degradation mechanism. The Schottky diode degradation exhibits an increase in reverse gate leakage current/series resistance, and a decrease in Schottky barrier height. The lifetest showed that no failure was induced by electro-migration on diodes operating up to 1.2/spl times/10/sup 10/ Amps/cm/sup 2/ (the maximum allowable current density for Au in MIL-M-38510 is 6/spl times/10/sup 5/ Amps/cm/sup 2/). Accordingly, the reliability guideline of GaAs PHEMT Schottky diodes for mixer applications was established.
Sponsorship	IEEE Electron Devices Soc
Starting Page	123
Ending Page	126
File Size	268448
Page Count	4
File Format	PDF
ISBN	0780386167
ISSN	15508781
DOI	10.1109/CSICS.2004.1392509
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide PHEMTs Schottky diodes Degradation Feeds Leakage current Schottky barriers Current density Gold Guidelines
Content Type	Text
Resource Type	Article

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Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density

The Effect of Gate Current on the Degradation of GaAs PHEMT MMICs

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