NDLI: Two-dimensional finite element modeling of NPN devices

Content Provider	IEEE Xplore Digital Library
Author	Hachtel, G.D. Mack, M.H. O'Brien, R.R. Quinn, H.F.
Copyright Year	1976
Description	Author affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York (Hachtel, G.D.)
Abstract	Our program for semiconductor analysis by finite elements has previously been applied to the analysis of IGFET devices. In this paper we describe the application of an experimental program to a state-of-the-art bipolar transistor in inverse active mode. We compute the hole and electron current distributions across the collector-base junction at low forward biases (the base-emitter junction is shorted). Our results show that (a) the injected hole current (from base to collector) is nearly uniform, and (b) the injected electron current (from collector to base) is greatest under the emitter, decreases under the oxide contact, and rises under the base contact. We conclude with a description of a novel method for solving the difficult problem of maintaining current conservation which is valid for finite elements of arbitrary approximation order. This new method employs Gummel's integral formula for the currents, but avoids the nonphysical "gaps" in current flow.
Starting Page	166
Ending Page	169
File Size	261903
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1976.189010
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1976-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Finite element methods Integral equations Charge carrier processes Electron emission Partial differential equations Polynomials Finite difference methods Grid computing Bipolar transistors Distributed computing
Content Type	Text
Resource Type	Article

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