NDLI: Interface state density in Au and Al nGaAs Schottky diodes

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Interface state density in Au and Al nGaAs Schottky diodes

Content Provider	IEEE Xplore Digital Library
Author	Borrego, J.M. Gutmann, R.J. Ashok, S. Ashok, S.
Copyright Year	1976
Description	Author affiliation: Rensselaer Polytechnic Institute, Troy, New York (Borrego, J.M.)
Abstract	A method for determining the interface state density in Schottky diodes taking into account both I-V and C-V data while considering the presence of a deep donor level is presented. The model assumes that the barrier height is controlled by the energy distribution of interface states in equilibrium with the metal and the applied potential and does not include, explicitly, an interfacial layer. The model has been applied to extract interface state densities of Au and Al nGaAs guarded Schottky diodes fabricated from bulk and VPE
Starting Page	365
Ending Page	368
File Size	322663
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1976.189058
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1976-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Interface states Gold Schottky diodes Schottky barriers Capacitance-voltage characteristics Gallium arsenide Temperature measurement Data engineering Systems engineering and theory Density measurement
Content Type	Text
Resource Type	Article

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