NDLI: Early detection of pattern defects on PDI wafers

Content Provider	IEEE Xplore Digital Library
Author	Teagle, R.F. Lavigne, E.C. Mont, F.W. Fei Wang HungYu Tien YuanChi Chiang Tomlinson, D.
Copyright Year	2014
Description	Author affiliation: IBM Albany Nanotech, Albany, NY, USA (Lavigne, E.C.) \|\| Hermes Microvision Inc., San Jose, CA, USA (Fei Wang; HungYu Tien; YuanChi Chiang; Tomlinson, D.) \|\| GLOBALFOUNDRIES, Albany, NY, USA (Teagle, R.F.; Mont, F.W.)
Abstract	As critical design rules continuously shrink to 10nm and beyond, and double patterning or multiple patterning become prevailing practice, detection of missing pattern prior to Chemical Mechanical Planarization (CMP) or the final etch level in Back End of Line (BEoL) process has always been a significant challenge. Early detection of single line and multi-line opens with a Post Develop Inspection (PDI) could help process integration significantly reduce the yield learning cycle and provide the opportunities of wafer rework in High Volume Manufacturing (HVM). Cost and time to market are incentives to develop this application. Bright Field Inspection (BFI), which was used prevailingly for pattern defect detection, has clearly shown limitations on gap defect detection. However, e-beam inspection, successfully demonstrated for PDI after carefully optimizing SEM conditions, can achieve both high defect capture rate and minimize photo resist shrinkage. A strong correlation between line bridge/protrusion defects and single/multi line openings has been demonstrated on both modulated and normal condition die.
Sponsorship	IEEE Electron Dev. Soc.
Starting Page	288
Ending Page	292
File Size	761084
Page Count	5
File Format	PDF
ISBN	9781479939442
DOI	10.1109/ASMC.2014.6847023
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inspection Resists Bridges Imaging Lithography Sensitivity PWC e-beam inspection (EBI) Post Development Inspection (PDI) Single Line Open (SLO) Multiple Line Open (MLO) BEoL
Content Type	Text
Resource Type	Article

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Estimation of exposure parameters of chosen e-beam resists using variable shaped e-beam pattern generator

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Application of blind method to phase-shifting lithography

Detection of critical defects with E-beam technology for development and monitoring of advanced NAND processes

Development of the high voltage e-beam lithography system

Early detection of pattern defects on PDI wafers

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