NDLI: Full-Wafer Voltage Contrast Inspection for Detection of BEOL Defects

Content Provider	IEEE Xplore Digital Library
Author	Hafer, R.F. Patterson, O.D. Hahn, R. Hong Xiao
Copyright Year	1988
Abstract	This paper details an application where E-beam inspection (EBI) can be used for 100% full wafer inspection, generally considered a mythical target for EBI. For process layers where the line-widths and defects of interest are large, very large pixel size and high scan frequency can be used, thereby making full wafer inspection feasible. The metal layers in the back-end-of-line fit this bill when scanned in voltage contrast (VC) mode. Shorts or opens at any previous layer connected to the surface nodes can cause a VC signal, therefore the electrical health of each wafer is assessed for multiple layers simultaneously across the full wafer. The advantage of this scan is that failure sites can be identified and somewhat localized well before wafer final test. This application is more appropriate for semi-mature technologies where there are few defects per wafer, and therefore a full wafer scan is needed to catch a reasonable number of defects. The challenge with this type inspection is in identification of the root cause. A number of studies to map VC defect strength to types of physical defects are described. These studies demonstrated that this technique successfully finds yield limiting defects, but not all yield limiting defects will be detected. A plan for how to use the VC inspection to find root cause is presented.
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	461
Ending Page	468
Page Count	8
File Size	3505831
File Format	PDF
ISSN	08946507
Volume Number	28
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inspection Throughput Failure analysis Integrated circuit manufacture voltage contrast EBI electron beam inspection full-wafer inspection shorts opens defects
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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