NDLI: Effects of Cu Interdiffusion on the Electromigration Failure of FM/Cu/FM Tri-Layers for Spin Valve Read Sensors

Content Provider	IEEE Xplore Digital Library
Author	Jing Jiang Seongtae Bae Sunwook Kim
Copyright Year	1965
Abstract	Electromigration-induced failure (EIF) lifetime characteristics of FM/Cu/FM (FM: NiFe or Co) tri-layers, which are currently used in GMR spin-valve read sensors, have been investigated to verify the fundamental failure mechanisms. It is found that the lifetime of NiFe/Cu/NiFe tri-layers was dramatically increased by decreasing the Cu spacer thickness. The obvious shorter lifetime of NiFe/Cu/NiFe tri-layers compared to that of Co/Cu/Co tri-layers was mainly thought to be attributed to the formation of current paths resulted from the electromigration-induced Cu interdiffusion into the top or bottom NiFe layer during electrical stressing caused by the Ni-Cu intermixing. The activation energy (E_a) and current density factor, "n" value of the NiFe/Cu/NiFe tri-layers were found to be 0.23-0.25eV and 1.23-1.32, respectively. It is suggested that the control of Cu spacer interdiffusion and chemical roughness at the FM/Cu interface is crucial in determining the electrical reliability of FM/Cu/FM based GMR spin valve read sensors
Sponsorship	IEEE Magnetics Society
Starting Page	2836
Ending Page	2838
Page Count	3
File Size	440006
File Format	PDF
ISSN	00189464
Volume Number	43
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Spin valves Magnetic sensors Sensor phenomena and characterization Giant magnetoresistance Gas detectors Current density Biosensors Temperature dependence Temperature distribution interdiffusion of Cu Spacer Cu spacer microstructure electromigration FM/Cu spacer interface FM/Cu/FM tri-layers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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