NDLI: Pinned Spin Depth Profile of an Oxidized-Mn/Ga<formula formulatype=inline><tex>$_{1 - x}$</tex></formula>Mn<formula formulatype=inline> <tex>$_{x}$</tex></formula>As Exchange Bias Bilayer

Content Provider	IEEE Xplore Digital Library
Author	Kirby, B.J. Fitzsimmons, M.R. Borchers, J.A. Ge, Z. Liu, X. Furdyna, J.K.
Copyright Year	1965
Abstract	Mn/Ga_1-xMn_xAs bilayers can exhibit large exchange bias if annealed for an optimal period of time to transform the Mn cap into antiferromagnetic MnO. Annealing for too long tends to drastically increase the number of spins that become pinned along the direction of a cooling field, but it also results in samples that exhibit little or no exchange bias. To investigate why the increase in pinned spins does not enhance the exchange coupling, we used polarized neutron reflectometry to examine the magnetic depth profile of a typical overannealed Mn/Ga_1-xMn_xAs bilayer. We observe a large magnetization with a pinnable component distributed throughout the cap. This shows that overannealing results in a cap that is not entirely antiferromagnetic, and that the additional pinned spins do not originate from uncompensated moments directly at the antiferromagnet/ferromagnet interface-explaining why they do not contribute to the exchange bias coupling
Sponsorship	IEEE Magnetics Society
Starting Page	3016
Ending Page	3018
Page Count	3
File Size	339750
File Format	PDF
ISSN	00189464
Volume Number	43
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Antiferromagnetic materials Magnetization SQUIDs Superconducting magnets Neutrons Cooling Semiconductor films Temperature dependence Magnetic devices neutron scattering Exchange bias magnetic semiconductors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Temperature Dependence of Exchange Bias and Coercivity in (Ga,Mn)As–MnO Bilayer Structures

Ferromagnetism in new diluted magnetic semiconductor Si/sub 1-x/Mn/sub x/Te/sub 1.5/ crystals

Study on Absence of Room-Temperature Ferromagnetism in the Mn-AlN Films With Various Mn Concentrations

Annealing Dependence of Exchange Bias in MnO/Ga$_{1−}$ $_{ x }$Mn$_{ x }$As Heterostructures

Exchange Bias Between ZnCoO and IrMn

Magnetic Measurements On The III-VI Diluted Semiconductor Ga/sub 1-x/Mn/sub x/Se

Tunnel magnetoresistance in II-VI/III-V heterostructure Ga/sub 1-x/Mn/sub x/As/ZnSe/Ga/sub 1-x/Mn/sub x/As magnetic tunnel junctions

Magnetooptic Effect Of Ferromagnetic Diliuted Magnetic Semiconductor Ga/sub 1-x/Mn/sub x/As

High exchange-coupling field and thermal stability of antiferromagnetic Ir-Mn pinned spin-valve films

Pinned Spin Depth Profile of an Oxidized-Mn/Ga$_{1 - x}$Mn $_{x}$As Exchange Bias Bilayer—The Effects of Overannealing

Similar Documents

Temperature Dependence of Exchange Bias and Coercivity in (Ga,Mn)As–MnO Bilayer Structures

Ferromagnetism in new diluted magnetic semiconductor Si/sub 1-x/Mn/sub x/Te/sub 1.5/ crystals

Study on Absence of Room-Temperature Ferromagnetism in the Mn-AlN Films With Various Mn Concentrations

Annealing Dependence of Exchange Bias in MnO/Ga$_{1−}$ $_{ x }$Mn$_{ x }$As Heterostructures

Exchange Bias Between ZnCoO and IrMn

Magnetic Measurements On The III-VI Diluted Semiconductor Ga/sub 1-x/Mn/sub x/Se

Tunnel magnetoresistance in II-VI/III-V heterostructure Ga/sub 1-x/Mn/sub x/As/ZnSe/Ga/sub 1-x/Mn/sub x/As magnetic tunnel junctions

Magnetooptic Effect Of Ferromagnetic Diliuted Magnetic Semiconductor Ga/sub 1-x/Mn/sub x/As

High exchange-coupling field and thermal stability of antiferromagnetic Ir-Mn pinned spin-valve films

Pinned Spin Depth Profile of an Oxidized-Mn/Ga$_{1 - x}$Mn $_{x}$As Exchange Bias Bilayer—The Effects of Overannealing