NDLI: The Effects of Ruthenium and Grain Size on Spin Valves With Ultra Thin Antiferromagnetic Pinning Layers

Content Provider	IEEE Xplore Digital Library
Author	Furjanic, C. Draganova, D.K. Buchanan, W. Moyerman, S.M. Gannett, W. Sparks, P.D. Carey, M.J. Eckert, J.C.
Copyright Year	1965
Abstract	Improvements in exchange-biased spin valves have come from control of the grain size and the addition of a ruthenium layer. In this work the GMR ratio, the exchange field and blocking temperature for three sets of spin valves with varying IrMn thickness were measured. Two sets of samples with grain sizes of 10 nm, and one with a grain size of 30 nm were studied. One of the 10 nm grain size sets has a Ru layer separating the antiferromagnet from the Ta capping layer. The GMR ratio at 5 K depends on the grain size, but shows no dependence on the presence of the Ru layer, with larger grain samples having a higher GMR ratio. The exchange fields at 5 K are independent of grain size. However, the samples with the Ru layer show a higher exchange field at 5 K than those without. The blocking temperature for the small grain sets with and without Ru correlate very well with the exchange field. Ta in contact with the IrMn causes a magnetically "dead" region
Sponsorship	IEEE Magnetics Society
Starting Page	2845
Ending Page	2847
Page Count	3
File Size	109174
File Format	PDF
ISSN	00189464
Volume Number	43
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Grain size Spin valves Antiferromagnetic materials Giant magnetoresistance Magnetic field measurement Electrical resistance measurement Temperature Magnetic anisotropy Perpendicular magnetic anisotropy Magnetic sensors spin valves Exchange bias giant magnetoresistance grain-size effects
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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