NDLI: The Response of Transport Properties to Static Electric Field in La<formula formulatype=inline><tex>$_{0.7}$</tex></formula>Ce<formula formulatype=inline><tex>$_{0.3}$</tex></formula>MnO<formula formulatype=inline> <tex>$_{3}$</tex></formula> Epitaxial Thin Films

Content Provider	IEEE Xplore Digital Library
Author	Gao, J. Hu, F.X.
Copyright Year	1965
Abstract	We investigated the influence of static electric field on the transport properties in La_0.7Ce_0.3MnO₃ epitaxial thin films by using a simple field effect configuration (FEC), which was formed on a single layer film. Substrates act as gates and films as channels. Such an easily manipulative technique avoids many possible problems appeared in multilayer structures, such as poor interface and severe inter-diffusion, which may influence the intrinsic characteristics of investigated targets. One knows that tetravalence-doped La_0.7Ce_0.3MnO₃ (LEMO) systems exhibit metal-insulator transition and ferromagnetic behavior, similar to the ditravalence-doped La_0.7Ca_0.3MnO₃. However, for the conductive mechanism of LEMO, strong controversies have existed for a long time with whether it is intrinsically electron-type or hole-type. Our experiments give evidence of the hole-type nature in LEMO. In the device with LEMO as channel and LaAlO₃(LAO) as gate, applied positive bias poles gate and induces charge at the area between gate and channel. The polarized charge in the gate is compensated by inducing electrons in the channel. If LEMO is of electron-type, the increased carrier density would cause a decease of channel resistance. However, we experimentally found the channel resistance remarkably increases upon a positive bias. Such a fact is completely the same as the behavior observed in hole-doped La _0.7Ca_0.3MnO₃channel, and thus strongly supports the hole-type nature in LEMO channel. Furthermore, we found that the large field effect in LEMO is nonlinear and polarity dependent on the applied bias. A percolative phase separation picture is taking into account to interpret the observed field effect
Sponsorship	IEEE Magnetics Society
Starting Page	3058
Ending Page	3060
Page Count	3
File Size	105918
File Format	PDF
ISSN	00189464
Volume Number	43
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Nonhomogeneous media Colossal magnetoresistance Current Heating Doping Substrates Metal-insulator structures Polarization Electrons La$_{0.7}$Ce $_{0.3}$MnO$_{3 }$ (LEMO) films Field effect configuration (FEC)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Magneto-transport properties of La$_{0.7}$Ca$_{0.3}$MnO$_{3}$/SrTiO$_{3}$/La$_{0.7}$Ce$_{0.3}$MnO$_{3}$ tunnel junction

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The Response of Transport Properties to Static Electric Field in La$_{0.7}$Ce$_{0.3}$MnO $_{3}$ Epitaxial Thin Films

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