NDLI: Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues

Content Provider	IEEE Xplore Digital Library
Author	Amoroso, S.M. Gerrer, L. Nedjalkov, M. Hussin, R. Alexander, C. Asenov, A.
Copyright Year	1963
Abstract	This paper investigates the accuracy and issues of modeling carrier mobility in the channel of a nanoscaled MOSFET in the presence of discrete charges trapped at the channel/oxide interface. By comparing drift-diffusion (DD) and Monte Carlo (MC) simulation results, a quasi-local mobility model accounting for the complex scattering profile associated with a trapped carrier at the center of the channel is firstly derived. The accuracy of this model is evaluated on a test-bed 25-nm MOS transistor at low drain bias condition and for several applied gate biases. The issues in extending this mobility model to high drain biases regime and to the case of randomly positioned trapped charges are then discussed in the second part of this paper. Our findings show that DD simulations can maintain computational efficiency and accuracy at low drain biases, when a proper mobility model is used to describe the impact of discrete trapped charges. On the other hand, more complex corrections, that go beyond the simple mobility modification, are necessary to compensate the different carrier concentrations between DD and MC approaches at high drain biases.
Sponsorship	IEEE Electron Devices Society
Starting Page	1292
Ending Page	1298
Page Count	7
File Size	3011873
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scattering Logic gates MOSFET Current density Electrostatics Impurities Semiconductor device modeling variability. Charge trapping mobility model MOSFETs reliability semiconductor device modeling variability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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