NDLI: Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application

Content Provider	IEEE Xplore Digital Library
Author	Hongbin Zhao Hailing Tu Feng Wei Jun Du
Copyright Year	1963
Abstract	A highly transparent resistive random access memory with a configuration of multilayer graphene (MLG)/Dy₂O₃/indium tin oxide (ITO) structure is demonstrated in this paper. The fabricated device is transparent, with 80% transmittance at 550 nm. The MLG/Dy₂O₃/ITO device shows unipolar resistance switching with a low operation current (<;100 μA), low operation voltage (<;1 V), low power consumption (<;100 μW), high resistance ratio (>10⁴), fast switching speed (<;60 ns), reliable data retention, and promising cycle endurance properties (>200 cycles), which makes a step toward the realization of low-power transparent electronics for next-generation nonvolatile memory application. The MLG/Dy₂O₃/ITO device exhibited typical filamentary-conduction-type resistive random access memory behavior and no forming process is required. High resistance state (HRS) increases with a reduced device area while low resistance state (LRS) is insensitive to the device sizes. Moreover, Raman spectra obtained in pristine state, HRS, and LRS indicate that the lower power consumption of MLG/Dy₂O₃/ITO device is attributable to the formation of oxygen graphene layers.
Sponsorship	IEEE Electron Devices Society
Starting Page	1388
Ending Page	1393
Page Count	6
File Size	3323876
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium tin oxide Graphene Switches Resistance Electrodes Nonvolatile memory Random access memory transparent memory. Dysprosium oxide graphene electrode resistive switching (RS) transparent memory
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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