NDLI: A Simulation Study of Oxygen Vacancy-Induced Variability in <inline-formula> <tex-math notation=TeX>${rm HfO}_{2}$ </tex-math></inline-formula>/Metal Gated SOI FinFET

Content Provider	IEEE Xplore Digital Library
Author	Trivedi, A.R. Ando, T. Singhee, A. Kerber, P. Acar, E. Frank, D.J. Mukhopadhyay, S.
Copyright Year	1963
Abstract	Deposition of a metal gate on high-K dielectric HfO₂ is known to generate oxygen vacancy (OVs) defects. Positively charged OVs in the dielectric affect the gate electrostatics and modulate the effective gate workfunction (WF). Count and spatial allocation of OVs varies from device-to-device and induces significant local variability in WF and V_th. This paper presents the statistical models to simulate OV concentration and placement depending on the gate formation conditions. OV-induced variability is studied for SOI FinFET, and compared against the other sources of variability across the technologies. The implications of gate first and gate last processes to the OV concentration/distribution are studied. Simulations show that with channel length and gate dielectric thickness scaling, the OV-induced variability becomes a significant concern.
Sponsorship	IEEE Electron Devices Society
Starting Page	1262
Ending Page	1269
Page Count	8
File Size	3001450
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Hafnium compounds FinFETs Oxygen Energy states Tin variability in high-κ/metal gate-stacks. FinFET local variability oxygen vacancy variability in high- $\kappa$ /metal gate-stacks
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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