NDLI: Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor Devices

Content Provider	IEEE Xplore Digital Library
Author	Long, B. Ordosgoitti, J. Jha, R. Melkonian, C.
Copyright Year	1963
Abstract	This report presents the charge transport mechanisms in the virgin resistance state (VRS) and breakdown resistance state (BRS) of transition metal oxide memristor devices with tungsten (W) electrodes. The devices behaved as reconfigurable diodes up to ±3.2 V in VRS without the need of any intentional electroforming. The mechanism of conduction in VRS was observed to be governed by tunneling at low temperatures and Frenkel-Poole (F-P) conduction at high temperatures. The BRS was achieved by applying sweep voltages above ±3.2 V after which the device failed to reset. The mechanism of charge transport in BRS was governed by ohmic conduction through defect-assisted localized conduction channels. The barrier height for F-P conduction in VRS and activation energy of defects for ohmic conduction in BRS were experimentally measured.
Sponsorship	IEEE Electron Devices Society
Starting Page	3912
Ending Page	3919
Page Count	8
File Size	1032625
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Memristors Resistance Temperature measurement Current measurement Schottky barriers Voltage measurement Switches transition metal oxide (MOx) Charge transport memristor resistive switching
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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