NDLI: The Soft <formula formulatype=inline><tex Notation=TeX>$hbox{Punchthrough}+$</tex></formula> Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

Content Provider	IEEE Xplore Digital Library
Author	Antoniou, M. Udrea, F. Bauer, F. Nistor, I.
Copyright Year	1963
Abstract	The aim of this paper is to demonstrate the application of the superjunction (SJ) design in an insulated gate bipolar transistor (IGBT). Bipolar conduction is present and enhanced at the cathode side of the device, while the p-pillars collect the plasma deep from the anode side, thus significantly enhancing its turn-off speed. The disconnected soft punchthrough + (SPT+) SJ IGBT is similar to the SJ IGBT, which we have previously reported, but the drift region pillars do not extend up to the cathode contact. Instead, the upper part of this device is similar to the SPT+ IGBT, i.e., it features an n+ injector around the p-well and the n-drift region that is lightly doped. The improvement in the overall performance is impressive (25% lower ON-state losses and 30% lower switching losses) and can indeed justify the technology cost associated with the SJ technology. We also demonstrate how this technology can be used to form a snapback-free reverse conducting IGBT.
Sponsorship	IEEE Electron Devices Society
Starting Page	769
Ending Page	775
Page Count	7
File Size	1248839
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Anodes Cathodes Doping Junctions Performance evaluation Switches superjunction (SJ) Insulated gate bipolar transistor (IGBT) reverse conducting (RC) insulated gate bipolar transistor (IGBT) soft punchthrough
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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