NDLI: Effect of <formula formulatype=inline><tex Notation=TeX>$hbox{NH}_{3}$</tex></formula> Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-<formula formulatype=inline><tex Notation=TeX>$ kappa$</tex></formula> Dielectric nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Yu-Ting Chen Kun-Ming Chen Cheng-Li Lin Wen-Kuan Yeh Guo-Wei Huang Chien-Ming Lai Yi-Wen Chen Che-Hua Hsu Fon-Shan Huang
Copyright Year	1963
Abstract	The effects of post-NH₃ plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-κ/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk- and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-κ layer. In this paper, appropriate post-NH₃ plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-κ/metal-gate nMOSFET with a Gd cap layer.
Sponsorship	IEEE Electron Devices Society
Starting Page	812
Ending Page	818
Page Count	7
File Size	1163797
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates MOSFETs Dielectrics Plasmas Low-frequency noise Nitrogen plasma nitridation Charge pumping gadolinium (Gd) high- $\kappa$ hot-carrier instability (HCI) low-frequency noise
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-$k$ Gated MOSFETs by a Modified Charge Pumping Technique

Physical and Electrical Analysis of Post-$ hbox{HfO}_{2}$ Fluorine Plasma Treatment for the Improvement of $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs' Performance

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer $hbox{HfO}_{2}/hbox{SiO}_{2}$ High- $kappa$ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Energy and Spatial Distribution of Traps in $hbox{SiO}_{2}/hbox{Al}_{2}hbox{O}_{3}$ nMOSFETs

Spatial Distributions of Trapping Centers in $ hbox{HfO}_{2}/hbox{SiO}_{2}$ Gate Stack

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

Impacts of $hbox{N}_{2}$ and $hbox{NH}_{3}$ Plasma Surface Treatments on High-Performance LTPS-TFT With High-$kappa$ Gate Dielectric

PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics

Effect of $hbox{NH}_{3}$ Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-$ kappa$ Dielectric nMOSFETs

Similar Documents

Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-$k$ Gated MOSFETs by a Modified Charge Pumping Technique

Physical and Electrical Analysis of Post-$ hbox{HfO}_{2}$ Fluorine Plasma Treatment for the Improvement of $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs' Performance

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer $hbox{HfO}_{2}/hbox{SiO}_{2}$ High- $kappa$ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Energy and Spatial Distribution of Traps in $hbox{SiO}_{2}/hbox{Al}_{2}hbox{O}_{3}$ nMOSFETs

Spatial Distributions of Trapping Centers in $ hbox{HfO}_{2}/hbox{SiO}_{2}$ Gate Stack

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

Impacts of $hbox{N}_{2}$ and $hbox{NH}_{3}$ Plasma Surface Treatments on High-Performance LTPS-TFT With High-$kappa$ Gate Dielectric

PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics

Effect of $hbox{NH}_{3}$ Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-$ kappa$ Dielectric nMOSFETs