NDLI: A Novel Method to Improve Laser Anneal Worsened Negative Bias Temperature Instability in 40-nm CMOS Technology

Content Provider	IEEE Xplore Digital Library
Author	Ming-Shing Chen Yean-Kuen Fang Feng-Renn Juang Yen-Ting Chiang Cheng-I Lin Tung-Hsing Lee Chou, S. Ning, J.
Copyright Year	1963
Abstract	From the measured data, the impact of the rapid thermal process (RTP) and laser spike anneal (LSA) sequence on negative bias temperature instability (NBTI) and current gain was investigated on 40-nm complementary metal-oxide semiconductor technology. For the conventional sequence RTP/LSA, a significant threshold voltage V_T shift is observed due to the NBTI. The thermal gradient in the LSA step induces a thermomechanical stress inducing oxide fixed charges and an increase in Si dangling bonds at the SiON/Si interface, thus increasing the V_T shift. By moving the LSA step to before the RTP anneal and coimplanting a carbon atom in the source/drain extension implant processing, the obvious V_T shift could be suppressed to the same as the RTP-only anneal. Best of all, the sequence change does not impact the gain of the original combination anneal over the RTP-only anneal in the on current of devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	901
Ending Page	905
Page Count	5
File Size	577100
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Logic gates Rapid thermal annealing CMOS integrated circuits Microelectronics Junctions rapid thermal annealing (RTA) Complementary metal–oxide–semiconductor (CMOS) device flash-lamp annealing (FLA) laser spike anneal (LSA) negative bias temperature instability (NBTI)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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