NDLI: Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-<formula formulatype=inline><tex Notation=TeX>$k$</tex></formula> Gated MOSFETs by a Modified Charge Pumping Technique

Content Provider	IEEE Xplore Digital Library
Author	Chun-Chang Lu Kuei-Shu Chang-Liao Che-Hao Tsao Tien-Ko Wang Hsueh-Chao Ko Yao-Tung Hsu
Copyright Year	1963
Abstract	To better understand the channel-hot-carrier (CHC)-induced reliability problems, a modified charge-pumping (CP) technique is proposed to characterize the distribution profiles of trap generation in MOSFETs with high- k gate-stack. The effects of gate leakage current on CP measurements were minimized to ensure the correct CP data. While applying dynamic drain bias, the gate-induced drain leakage current is also considered to get correct CP data. Through the CP with dynamic drain bias and various gate pulse frequencies, the profiling of CHC stress-induced interface- and border-traps can be achieved. The CHC stress-induced interface trap generation appears along whole the channel but that-induced border trap generation is mainly located above the pinchoff region near the drain and decreases dramatically toward the center of the channel. Thus, the CHC stress causes quite localized border trap generation at the gate-edge region inside the high- k dielectric. The reliability data measured by CP with different gate voltage swings confirm that CHC stress causes interface trap generation through whole the channel and significant border trap generation at gate-edge region.
Sponsorship	IEEE Electron Devices Society
Starting Page	936
Ending Page	942
Page Count	7
File Size	1982709
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Current measurement Frequency measurement Voltage measurement Stress Dielectrics Pulse measurements trap generation Channel-hot-carrier (CHC) charge-pumping (CP) high-$\kappa$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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