NDLI: Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer <formula formulatype=inline><tex>$hbox{HfO}_{2}/hbox{SiO}_{2}$</tex></formula> High- <formula formulatype=inline><tex>$kappa$</tex></formula> Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Content Provider	IEEE Xplore Digital Library
Author	Wei-Hao Wu Bing-Yue Tsui Mao-Chieh Chen Yong-Tian Hou Yin Jin Tao, H.-J. Shih-Chang Chen Mong-Song Liang
Copyright Year	1963
Abstract	Transient charging and discharging of border traps in the dual-layer HfO₂/SiO₂ high-kappa gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchange of charge carriers mainly occurs through the direct tunneling between the Si conduction band states and border traps in the HfO₂ high-kappa dielectric within the transient charging and discharging stages in one pulse cycle. Moreover, the transient charging and discharging behaviors could be observed in the time scale of 10^-8- 10^-4 s and well described by the charge trapping/detrapping model with dispersive capture/emission time constants used in static positive bias stress. Finally, the frequency and voltage dependencies of the border trap area density could also be transformed into the spatial and energetic distribution of border traps as a smoothed 3-D mesh profiling
Sponsorship	IEEE Electron Devices Society
Starting Page	1330
Ending Page	1337
Page Count	8
File Size	424534
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Charge pumps Dielectrics Tunneling Charge carriers Frequency measurement Transient analysis transient discharging effect Border trap hafnium oxide high- $\kappa$ dielectric low-frequency charge pumping method transient charging effect
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Spatial Distributions of Trapping Centers in $ hbox{HfO}_{2}/hbox{SiO}_{2}$ Gate Stack

A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $hbox{SiO}_{2}$ or in High- $kappa$ Gate Stacks

Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide

Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-$kappa$ Gated MOS Devices

Direct determination of interface and bulk traps in stacked HfO/sub 2/ dielectrics using charge pumping method

Stress-induced defect generation in HfO stacks observed by using charge pumping and low frequency noise measurements

The Influence of TiN Thickness and $hbox{SiO}_{2}$ Formation Method on the Structural and Electrical Properties of $hbox{TiN}/ hbox{HfO}_{2}/hbox{SiO}_{2}$ Gate Stacks

Two-Pulse $C$–$V$ : A New Method for Characterizing Electron Traps in the Bulk of $ hbox{SiO}_{2}/hbox{high-}kappa$ Dielectric Stacks

Border-Trap Characterization in High-$kappa$ Strained-Si MOSFETs

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer $hbox{HfO}_{2}/hbox{SiO}_{2}$ High- $kappa$ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

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