NDLI: Determination of the Base-Dopant Concentration of Large-Area Crystalline Silicon Solar Cells

Content Provider	IEEE Xplore Digital Library
Author	Hinken, D. Milsted, A. Bock, R. Fischer, B. Bothe, K. Schutze, M. Isenberg, J. Schulze, A. Wagner, M.
Copyright Year	1963
Abstract	The capacitance-voltage (CV) measurement is a precise and fast method to determine base-dopant concentrations of crystalline silicon solar cells. Since available measurement equipment is usually limited in its current output, the application of CV analysis has been limited to small-area solar cells in research laboratories. We present an experimental setup that is capable of measuring CV curves with a current output of up to 2 A. Using this setup, we demonstrate the applicability of CV measurements to large-area industrial solar cells for base-dopant concentrations ranging between 6.0 × 10¹⁴ cm^-3 and 4.2 ×10¹⁶ cm^-3. An area enhancement factor f quantifying the relation between the macroscopic cell area and the active junction area is determined for alkaline textured mono- and isotextured multicrystalline silicon solar cells. Comparing the base dopant of the CV analysis with four-point probe measurements, we achieve an agreement with an uncertainty of 10%. For alkaline textured monocrystalline silicon solar cells, we demonstrate that the area enhancement factor can be extracted from the ratio of the pyramid base length and emitter thickness.
Sponsorship	IEEE Electron Devices Society
Starting Page	2831
Ending Page	2837
Page Count	7
File Size	645375
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Junctions Surface texture Silicon Surface treatment Current measurement Capacitance surface texture Capacitance–voltage characteristics photovoltaic cells
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Extended Analysis of Capacitance–Voltage Curves for the Determination of Bulk Dopant Concentrations of Textured Silicon Solar Cells

Determination of lifetime and diffusion length in silicon solar cells by self-biased (photovoltage) capacitance measurements

Estimating pyramid density of a random-textured surface by capacitance-voltage measurement of c-Si solar cells

Understanding of High-Throughput Rapid Thermal Firing of Screen-Printed Contacts to Large-Area Cast Multicrystalline Si Solar Cells

Low cost - high efficiency MIS/inversion layer solar cells

17.8-percent efficiency polycrystalline silicon solar cells

Honeycomb Structure on Multi-crystalline Silicon Al-BSF Solar Cell With 17.8% Efficiency

Abnormal Dopant Distribution in $hbox{POCl}_{3}$ -Diffused $hbox{N}^{+}$ Emitter of Textured Silicon Solar Cells

A novel method for the measurement of the C-V characteristic of a solar photovoltaic cell

Determination of the Base-Dopant Concentration of Large-Area Crystalline Silicon Solar Cells

Similar Documents

Extended Analysis of Capacitance–Voltage Curves for the Determination of Bulk Dopant Concentrations of Textured Silicon Solar Cells

Determination of lifetime and diffusion length in silicon solar cells by self-biased (photovoltage) capacitance measurements

Estimating pyramid density of a random-textured surface by capacitance-voltage measurement of c-Si solar cells

Understanding of High-Throughput Rapid Thermal Firing of Screen-Printed Contacts to Large-Area Cast Multicrystalline Si Solar Cells

Low cost - high efficiency MIS/inversion layer solar cells

17.8-percent efficiency polycrystalline silicon solar cells

Honeycomb Structure on Multi-crystalline Silicon Al-BSF Solar Cell With 17.8% Efficiency

Abnormal Dopant Distribution in $hbox{POCl}_{3}$ -Diffused $hbox{N}^{+}$ Emitter of Textured Silicon Solar Cells

A novel method for the measurement of the C-V characteristic of a solar photovoltaic cell

Determination of the Base-Dopant Concentration of Large-Area Crystalline Silicon Solar Cells