NDLI: Reduction of Turn-on, Knee, and Offset Voltages of InAlGaP/GaAs HBTs Using <formula formulatype=inline><tex Notation=TeX>$delta$</tex></formula>-Doping in the InAlGaP Emitter

Content Provider	IEEE Xplore Digital Library
Author	Yu-Shyan Lin Jia-Jhen Jiang
Copyright Year	1963
Abstract	In_0.5(Al_0.3Ga_0.7)_0.5P/GaAs heterojunction bipolar transistors (HBTs) are demonstrated as an alternative to AlGaAs/GaAs and InGaP/GaAs HBTs for microwave applications. The effects of δ -doping in the InAlGaP emitter on both electron transport and transistor performance are systemically explored. For comparison, a reference HBT with an identical epilayer design to that of the δ-doped HBT, except for the absence of a δ-doping layer, is processed at the same time. The two design options are established to yield comparable dc current gains β . InAlGaP can be selectively etched over GaAs, making the device etching routine. Notably, δ-doping simultaneously reduces the knee voltage V_knee, the offset voltage V_offset, and the turn-on voltage V_{BE, on} of the HBTs of interest. This paper also sheds light on the behavior of the offset voltage for these devices. An unexpected attribute of the investigated devices is the effect of the base current on the offset voltage. The offset voltage is analyzed using a modified large-signal model. A further important inference of this paper is that the β of the transistor is flat across a large range of currents at room temperature. The use of InAlGaP as the emitter layer substantially decreases the variation of β with substrate temperature in the HBTs. The stability of the dc current gain with varying temperature is attributable to the inherent characteristics of this material system. The results make InAlGaP/GaAs δ-HBTs viable contenders for millimeter-wave application.
Sponsorship	IEEE Electron Devices Society
Starting Page	2970
Ending Page	2977
Page Count	8
File Size	389769
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Chemical vapor deposition Heterojunctions Current measurement Integrated circuits valence-band discontinuity Common–base characteristics $\delta$ -doping ideality factor InAlGaP knee voltage large-signal model metal–organic chemical vapor deposition (MOCVD) offset voltage turn-on voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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