NDLI: An Analytical Expression for Charge Collection Probability From Within a U-Shaped Junction Well

Content Provider	IEEE Xplore Digital Library
Author	Chee Chin Tan Ong, V.K.S.
Copyright Year	1963
Abstract	The analytical expression for the charge collection probability within a U-shaped junction well is derived in this paper. The U-shaped junction well is a common feature found in most integrated circuits. The charge collection probability is the probability that the generated carrier will be collected at the charge-collecting junction. The availability of an analytical expression is expected to facilitate the study and development of the electron-beam-induced current technique and devices that share the same operating principle, e.g., the solar cell. The newly derived analytical expression is expected to avoid the computational difficulties and problems encountered using the currently available analytical expression. The charge collection probability profiles that were generated using a semiconductor device simulator program were used to verify the analytical profiles that were computed using the newly derived analytical expression. Good agreement was found. The junction depth, junction width, diffusion length, and depth of the generation volume were varied, and their effects were studied.
Sponsorship	IEEE Electron Devices Society
Starting Page	3068
Ending Page	3073
Page Count	6
File Size	454819
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Simulation Electron beam applications Green's function methods Charge carrier processes Semiconductor device measurement simulation Charge-carrier processes electron beam application semiconductor material measurements
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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