NDLI: Determination of lifetime and diffusion length in silicon solar cells by self-biased (photovoltage) capacitance measurements

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Determination of lifetime and diffusion length in silicon solar cells by self-biased (photovoltage) capacitance measurements

Content Provider	IEEE Xplore Digital Library
Author	Swarup, P. Jain, V.K.
Copyright Year	1980
Abstract	Many methods have been developed for the measurement of the diffusion length and lifetime of minority carriers in p-n junction solar cells. This paper presents a new technique for the measurement of these parameters, based on capacitance measurements in forward-bias condition at room and liquid air temperatures. In this experiment the solar cell was not biased by an external dc source, but was forward-biased by its own photovoltage generated by illumination. The results give 135 um diffusion length and 5.2 µsec lifetime of the minority carriers in a n⁺-p Si-solar cell.
Sponsorship	IEEE Electron Devices Society
Starting Page	259
Ending Page	261
Page Count	3
File Size	346015
File Format	PDF
ISSN	07413106
Volume Number	3
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1982-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Photovoltaic cells Capacitance measurement Temperature Voltage P-n junctions Length measurement Lighting DC generators Solar power generation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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