NDLI: An SiC/GaN Detector/Front-End Detection System for High-Resolution Alpha-Particle Spectroscopy

Content Provider	IEEE Xplore Digital Library
Author	Pullia, A. Bertuccio, G. Maiocchi, D. Caccia, S. Zocca, F.
Copyright Year	1963
Abstract	An alpha-particle spectrometer has been assembled, consisting of an epitaxial 50 mum thick 4H silicon carbide (SiC) detector connected to a gallium-nitride (GaN) high-electron mobility transistor (HEMT) used as input transistor of the front-end electronics. The depleted layer of the SiC diode detector was sufficient to stop all alpha particles in the 4.8-MeV to 5.8-MeV energy range. An excellent energy resolution of ~ 0.9% has been obtained in this energy range at a temperature of 55degC. The energy-resolution limiting factor is found to be the dispersion of the energy loss in the gold Schottky contact, which acts as entrance window to the detector. We used a GaN front-end transistor because this material offers two important advantages over silicon: (1) it is a wide bandgap semiconductor and therefore is intrinsically more desirable for room and above-room temperature operation and (2) it can be grown on SiC substrates so as to realize SiC/GaN integrated systems. SiC-detector spectrometers are interesting in many nuclear applications where the operation environment is hostile, both in terms of ionising radiations and of high temperatures. Such applications include monitoring of ionising radiations in nuclear power plants and beam diagnostic in fundamental nuclear physics experiments.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3736
Ending Page	3740
Page Count	5
File Size	442854
File Format	PDF
ISSN	00189499
Volume Number	55
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Gallium nitride Detectors Spectroscopy HEMTs MODFETs Temperature Ionizing radiation Assembly III-V semiconductor materials silicon carbide (SiC) Alpha spectroscopy gallium nitride (GaN)
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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An SiC/GaN Detector/Front-End Detection System for High-Resolution Alpha-Particle Spectroscopy

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