NDLI: Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices

Content Provider	IEEE Xplore Digital Library
Author	Fleetwood, D.M. Schrimpf, R.D. Pantelides, S.T. Pease, R.L. Dunham, G.W.
Copyright Year	1963
Abstract	We present evidence that enhanced low-dose-rate sensitivity (ELDRS) in lateral and substrate pnp bipolar devices can occur because of the much lower probability for electron capture by protons in SiO₂, as compared to mobile or trapped holes. New experimental results and a critical evaluation of previous work demonstrate that, at high dose rates and/or in oxides with low concentrations of hydrogen, electrons can more easily neutralize slowly diffusing or metastably trapped holes via annihilation (recombination) or compensation (offsetting trapping) before the holes can release H⁺. In contrast, at low dose rates and/or in oxides with higher concentrations of hydrogen, which can react with and modify the structure of O-vacancy-related defects, it is more likely that holes can release H⁺ during transport. This is because the cross section for electron capture by H⁺ is several orders of magnitude smaller than the electron capture cross section for a slowly moving or metastably trapped hole. This enhanced proton release at low dose rates or in oxides with high hydrogen concentrations can lead to increased interface trap formation, which is the most common source of enhanced gain degradation in lateral and substrate pnp bipolar transistors.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2986
Ending Page	2991
Page Count	6
File Size	205452
File Format	PDF
ISSN	00189499
Volume Number	55
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radioactive decay Hydrogen Gain Degradation Electron traps Protons Metastasis Charge carrier processes Spontaneous emission Lead compounds vacancies Enhanced low-dose-rate sensitivity (ELDRS) hydrogen interface trap charge linear bipolar devices oxide trap charge
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO/sub 2/

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Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures

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