NDLI: Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging

Content Provider	IEEE Xplore Digital Library
Author	Schwank, J.R. Shaneyfelt, M.R. Dasgupta, A. Francis, S.A. Zhou, X.J. Fleetwood, D.M. Schrimpf, R.D. Pantelides, S.T. Felix, J.A. Dodd, P.E. Ferlet-Cavrois, V. Paillet, P. Dalton, S.M. Swanson, S.E. Hash, G.L. Thornberg, S.M. Hochrein, J.M. Lum, G.K.
Copyright Year	1963
Abstract	Transistors and ICs built in several different captive and commercial facilities were exposed to moisture, irradiated, and annealed. The moisture exposures were performed using highly accelerated stress test (HAST) at 130degC and 85% relative humidity. Irradiation of n-channel transistors exposed to HAST followed by a long-term anneal resulted in some increase in interface-trap and oxide-trapped charge buildup. However, exposing p-channel transistors to HAST preirradiation resulted in extremely large and unexpected voltage shifts immediately following irradiation. They were observed for devices with either doped oxide or nitride final chip passivation. Because of this, nitride passivation may not be sufficient to prevent H₂O from causing enhanced radiation-induced degradation over long time periods in some devices (e.g., commercial devices with nitride final chip passivation packaged in plastic packages). The smaller voltage shifts for the n-channel transistors may be related to the formation of phosphosilicate glass (PSG) overlying the sources and drains of the n-channel transistors impeding the diffusion of moisture to the gate oxides. It is shown that, the large radiation-induced voltage shifts for the p-channel transistors can lead to enhanced IC parametric degradation and functional failure at lower radiation levels. Large increases in radiation-induced field oxide leakage current were also observed for transistors exposed to HAST preirradiation. Transistors were also annealed (prior to irradiation) and irradiated in H₂. Approximately the same level of radiation-induced degradation was observed for n- and p-channel transistors suggesting that the diffusion kinetics for H₂ diffusion are considerably different than for H₂O diffusion. These results raise the concern that exposure of devices to moisture or hydrogen can lead to long-term radiation-induced aging effects.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3206
Ending Page	3215
Page Count	10
File Size	907112
File Format	PDF
ISSN	00189499
Volume Number	55
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Moisture Hydrogen MOS devices Degradation Aging Annealing Voltage Passivation Plastic packaging Performance evaluation MOS radiation effects Aging effects hydrogen exposure ionizing radiation moisture exposure
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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