NDLI: Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Content Provider	IEEE Xplore Digital Library
Author	Mamouni, F.E. Dixit, S.K. Schrimpf, R.D. Adell, P.C. Esqueda, I.S. McLain, M.L. Barnaby, H.J. Cristoloveanu, S. Xiong, W.
Copyright Year	1963
Abstract	The effects of gate length and drain bias on the off-state drain leakage current of irradiated fully-depleted SOI n-channel MOSFETs are reported. The experimental results are interpreted using a model based on the combined effects of band-to-band tunneling (BBT) and the trapped charge in the buried oxide. For negative gate-source voltages, the drain leakage current increases with the drain voltage because the electric field in the gate-to-drain overlap region is increasing. The off-state current in these devices increases with total ionizing dose due to oxide trapped charge build up in the buried oxide, enhanced by the BBT mechanism. The experimental data show that these effects are more significant for devices with shorter gate-lengths. Simulation results suggest that the BBT-generated holes are more likely to drift all the way from the drain to the source in shorter devices, enhancing the drain leakage current, while they tend to tunnel across the gate oxide in longer devices.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3259
Ending Page	3264
Page Count	6
File Size	375750
File Format	PDF
ISSN	00189499
Volume Number	55
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Leakage current MOSFETs Tunneling Single event upset Silicon on insulator technology Isolation technology Materials science and technology Propulsion Laboratories metal-oxide-semiconductor-field-effect transistor (MOSFET) Band-to-band tunneling (BBT) fully depleted silicon-on-insulator (FDSOI) gate induced drain leakage current (GIDL) leakage current and total ionizing dose (TID)
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

A Gate-Induced Drain-Leakage Current Model for Fully Depleted Double-Gate MOSFETs

Asymmetric gate-induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs

Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies

Total dose effects on double gate fully depleted SOI MOSFETs

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Similar Documents

Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

A Gate-Induced Drain-Leakage Current Model for Fully Depleted Double-Gate MOSFETs

Asymmetric gate-induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs

Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies

Total dose effects on double gate fully depleted SOI MOSFETs

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices