NDLI: A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC

Content Provider	IEEE Xplore Digital Library
Author	Jong-Wook Lee Webb, K.J.
Copyright Year	1963
Abstract	A temperature-dependent large-signal model for continuous-wave (CW) and pulsed-mode operation is presented and applied to aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistors (HEMTs) on silicon-carbide (SiC) substrates. The model includes thermal, RF dispersion, and bias-dependent capacitance model elements, and is suitable for application with a harmonic-balance simulator. Temperature- and bias-dependent on-wafer pulsed I-V and S-parameter measurements from 27/spl deg/C to 200/spl deg/C are used to examine trapping and thermal effects, and to determine temperature- and bias-dependent parameterized model coefficients for the nonlinear model. Large-signal measurement and model results are presented for 2 /spl times/ 0.35 /spl mu/m /spl times/ 125 /spl mu/m and 12 /spl times/ 0.35 /spl mu/m /spl times/ 125 /spl mu/m GaN HEMTs fabricated on SiC. The nonlinear model shows good agreement with measured CW power sweep data at an elevated temperature of 150/spl deg/C under more than 5-W power dissipation, and with measured pulsed load-pull data.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2
Ending Page	9
Page Count	8
File Size	426491
File Format	PDF
ISSN	00189480
Volume Number	52
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride HEMTs MODFETs Silicon carbide Pulse measurements Power measurement III-V semiconductor materials Radio frequency Capacitance Scattering parameters
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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