NDLI: Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

Content Provider	IEEE Xplore Digital Library
Author	Fleetwood, D.M.
Copyright Year	1963
Abstract	An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear and Space Radiation Effects Conference (NSREC). From the founding of the IEEE NSREC in 1964 until ~1976, foundational work led to the discovery of TID effects in MOS devices, the characterization of basic charge transport and trapping processes in SiO₂, and the development of the first generations of metal-gate radiation-hardened MOS technologies. From ~1977 until ~1985, significant progress was made in the understanding of critical defects and impurities that limit the radiation response of MOS devices. These include O vacancies in SiO₂, dangling Si bonds at the Si/SiO₂ interface, and hydrogen. In addition, radiation-hardened Si-gate CMOS technologies were developed. From ~1986 until ~1997, a significant focus was placed on understanding postirradiation effects in MOS devices and implementing hardness assurance test methods to qualify devices for use in space systems. Enhanced low-dose-rate sensitivity (ELDRS) was discovered and investigated in linear bipolar devices and integrated circuits. From ~1998 until the present, an increasing focus has been placed on theoretical studies enabled by rapidly advancing computational capabilities, modeling and simulation, effects in ultra-thin oxides and alternative dielectrics to SiO₂, and in developing a comprehensive model of ELDRS.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1706
Ending Page	1730
Page Count	25
File Size	4461509
File Format	PDF
ISSN	00189499
Volume Number	60
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Radiation effects Silicon Charge carrier processes MOS capacitors Integrated circuit modeling total ionizing dose Defects ELDRS hole traps hydrogen interface traps linear bipolar MOS
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity

Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity

The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides

Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen

The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits

From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

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