NDLI: Elevated temperature annealing of the neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors

Content Provider	IEEE Xplore Digital Library
Author	Eremin, V. Ivanov, A. Verbitskaya, E. Li, Z. Kraner, H.W.
Copyright Year	1963
Abstract	A new aspect of degradation phenomena of neutron irradiated silicon detectors has been revealed which consists in the significant influence of carbon related defect transformation on the detector reverse current (I/sub rev/). The annealing of the reverse current at elevated temperatures and the corresponding changes of the deep level transient spectroscopy (DLTS) spectra of defects for fast neutron irradiated silicon detectors, fabricated on high (4-6) k/spl Omega/-cm, moderate (0.5-1.0 k/spl Omega/-cm) and low (<100 /spl Omega/-cm) resistivity silicon material have been investigated. For all resistivity silicon detectors studied in this work, three annealing stages of the defects with deep levels in the energy band gap have been observed: 1) the transformation of carbon related defects in the temperature range of 20-72/spl deg/C; 2) decrease of the peak E/sub c/-0.4 eV at 150/spl deg/C, and 3) complete annealing of the peak E/sub c/-0.4 eV at 350/spl deg/C. The transformation of carbon related defects consisted in the annealing of interstitial carbon (C/sub i/) and simultaneous generation of C/sub i/-O/sub i/ complex and was accompanied by a significant reduction of the reverse current. The decrease of the peak E/sub c/-0.4 eV was observed in the temperature range of 72-350/spl deg/C and was affected by both the annealing of the E-center (V-P complex) and single minus charge state of divacancy (VV/sup -/) and by the changes in the filling of the deep levels in high or moderate resistivity Si. The results show the comparable role of the V-P complex and VV/sup -/ center in formation of E/sub c/-0.4 eV defect in high and moderate resistivity silicon.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	387
Ending Page	393
Page Count	7
File Size	590287
File Format	PDF
ISSN	00189499
Volume Number	42
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Neutrons Silicon Detectors Conductivity Temperature distribution Degradation Spectroscopy Photonic band gap Filling
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy

Fast neutron-induced changes in net impurity concentration of high-resistivity silicon

Long term instabilities in the defect assembly in irradiated high resistivity silicon detectors

Calculation of Reverse Annealing in Neutron Damaged p-Type Silicon

The long-term annealing of the cluster damage in high resistivity n-type silicon

Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis

Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors

Elevated temperature annealing of the neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors

Similar Documents

Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy

Fast neutron-induced changes in net impurity concentration of high-resistivity silicon

Long term instabilities in the defect assembly in irradiated high resistivity silicon detectors

Calculation of Reverse Annealing in Neutron Damaged p-Type Silicon

The long-term annealing of the cluster damage in high resistivity n-type silicon

Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis

Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors

Elevated temperature annealing of the neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors