NDLI: Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors

Content Provider	IEEE Xplore Digital Library
Author	Li, Z.
Copyright Year	1963
Abstract	Experimental data of the reverse annealing of the effective concentration of ionized space charges (N/sub eff/, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors has been compared with various models. The models include the compensation model (first order), the cluster model of the first order, the neutral to acceptor model (first order), and the cluster model of the second order. Detectors irradiated to various neutron fluences have been annealed at 80/spl deg/C for up to 17 hours to reach the saturation of the first apparent stage of the N/sub eff/ reverse anneal, which is equivalent of about one year of room temperature (RT) anneal. The annealing time constant, defined as the time at half saturation /spl tau//sub 1/2/, has been found to be virtually a constant (/spl sim/140 minutes/spl plusmn/l4%) for detectors irradiated to fluences ranging from 8.2/spl times/10/sup 12/ n/cm/sup 2/ to 3.2/spl times/10/sup 13/ n/cm/sup 2/, which is the distinguishing characteristic of the first order process. The least square fit of the data to the first order models has shown a time constant of 221.7 minutes with a 14% error and that to the second order model has shown a k constant of 7.3/spl times/10/sup -5/ s/sup -1/ with a 37% error. The best fit, however, is a first order fit with two time constants: a short one (/spl sim/44 minutes/spl plusmn/25%) with a small amplitude and a longer one (/spl sim/290 minutes/spl plusmn/l2%) with an almost five times larger amplitude, suggesting that even for the apparent first stage of the N/sub eff/ reverse anneal, there may be two stages. There is also evidence that even after the apparent first stage anneal, there is at least another stage which shows up in higher temperature annealing (150/spl deg/C).<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	224
Ending Page	234
Page Count	11
File Size	893521
File Format	PDF
ISSN	00189499
Volume Number	42
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Semiconductor process modeling Detectors Neutrons Temperature Space charge Doping Impurities Conductivity Silicon
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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