NDLI: Temperature dependence of hot carrier effects in short-channel Si-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Sano, N. Tomizawa, M. Yoshii, A.
Copyright Year	1963
Abstract	Full-band Monte Carlo simulations were carried out to investigate hot carrier effects associated with impact ionization under the lateral electric field profiles typical of submicrometer Si-MOSFETs. It is shown that the temperature dependence of the band-gap energy of Si plays an important role for hot carrier suppression at low temperature in submicrometer devices. On the other hand, as the device size shrinks into the sub-0.1 regime, in which the high-field region is comparable in size to or smaller than the energy relaxation length, the number of electrons with energy below the supply drain voltage becomes less sensitive to temperature. As a result, the suppression of impact ionization at low temperature in sub-0.1 /spl mu/m devices could be ascribed to both quasi-ballistic transport characteristics and temperature-dependent band-gap energy.
Sponsorship	IEEE Electron Devices Society
Starting Page	2211
Ending Page	2216
Page Count	6
File Size	817907
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Hot carrier effects Temperature sensors Impact ionization Temperature distribution Probability distribution Low voltage Photonic band gap Hot carriers Electrons
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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