NDLI: Effects of interface and bulk recombination on switching characteristics of AlGaAs/GaAs pnpn bistable device

Content Provider	IEEE Xplore Digital Library
Author	Fardi, H.Z.
Copyright Year	1963
Abstract	Device modeling is used to analyze the steady-state current voltage characteristics of double heterostructure AlGaAs/GaAs pnpn switches in the presence of interface and bulk recombination mechanisms. Simulation results show that the holding current increases significantly by shortening the carrier lifetime at heterojunction interface, while the holding voltage and breakover point remain relatively constant. Results also indicate that shortening the carrier lifetime in the inner pn homojunction region only increases the off-state leakage current. These results are in agreement with experimental data obtained by others, and may be used to design a device with optimum switching performance.
Sponsorship	IEEE Electron Devices Society
Starting Page	2248
Ending Page	2250
Page Count	3
File Size	332736
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Heterojunctions Silicon carbide Electrons Optical sensors Radiative recombination Solid state circuits Optical bistability Optical devices Optical films
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Effects of interface and bulk recombination on switching characteristics of AlGaAs/GaAs pnpn bistable device