NDLI: Gate oxide thinning at the active device/FOX boundary in submicrometer PBL isolation

Content Provider	IEEE Xplore Digital Library
Author	Kamgar, A. Hillenius, S.J. Baker, R.M. Nakahara, S. Bechtold, P.F.
Copyright Year	1963
Abstract	The impact of several poly buffer LOCOS processing parameters on the integrity and defect density (yield) of the gate oxide has been investigated by correlating electrical and structural studies. We found that a thin PBL pad-oxide, in general, gives rise to higher defect density. In addition, it results in a sharp active device/field oxide (FOX) boundary which, by the process of screen oxide growth and etch-back and FOX pull-back, creates a step in the Si in the bird's beak region. TEM studies revealed gate oxide thinning by as much as 30% over this step, explaining the early gate oxide breakdown at the active device/FOX region.
Sponsorship	IEEE Electron Devices Society
Starting Page	2089
Ending Page	2095
Page Count	7
File Size	961214
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Isolation technology Amorphous materials Testing Etching Electric breakdown Oxidation Tensile stress Lithography Silicon Buffer layers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Gate oxide thinning at the active device/FOX boundary in submicrometer PBL isolation