NDLI: Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Thayne, I.G. Jensen, G.U. Holland, M.C. Yaochung Chen Weigi Li Paulsen, A. Davies, J.H. Beaumont, S.P. Bhattacharya, P.K.
Copyright Year	1963
Abstract	In this paper we present a comparative study of the high frequency performance of 80-200 mm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs) superlattice buffer quantum well (QW) HEMTs, Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs pseudomorphic HEMTs and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP pseudomorphic HEMTs. From an experimental determination of the delays associated with transiting both the intrinsic and parasitic regions of the devices, effective electron velocities in the intrinsic channel region under the gate of the HEMT's were extracted. This analysis showed no evidence of any systematic increase in the effective channel velocity with reducing gate length in any of the devices. The effective electron velocity in the channel of the pseudomorphic In/sub 0.65/GaAs/InP HEMTs, determined to be at least 2.5/spl times/10/sup 5/, was was around twice that of either the Al/sub 0.25/GaAs/GaAs quantum well or pseudomorphic In/sub 0.15/GaAs/GaAs HEMTs, resulting in 80 nm gate length devices with f/sub T/'s of up to 275 GHz. We also show that device output conductance is strongly material dependent. A comparison of the different buffer layers showed that the (GaAs:AlAs) superlattice buffer was most effective in confining electrons to the channel of the Al/sub 0.25/GaAs/GaAs HEMTs, even for 80 nm gate length devices. We propose this may be partly due to the presence of minigaps in the superlattice which provide a barrier to electrons with energies of up to 0.6 eV. The output conductance of pseudomorphic In/sub 0.65/GaAs/InP HEMTs was found to be inferior to the GaAs based devices as carriers in the channel have greater energy due to their higher effective velocity and so are more difficult to confine to the 2DEG.
Sponsorship	IEEE Electron Devices Society
Starting Page	2047
Ending Page	2055
Page Count	9
File Size	1113553
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide HEMTs MODFETs Electrons Superlattices Indium phosphide PHEMTs Frequency Delay effects Conducting materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate

Breakdown walkout in AlAs/GaAs HEMTs

InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure

DC and microwave performance of a 0.1 mu m gate InAs/In/sub 0.52/Al/sub 0.8/As MODFET

Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs

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High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate

Breakdown walkout in AlAs/GaAs HEMTs

InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure

DC and microwave performance of a 0.1 mu m gate InAs/In/sub 0.52/Al/sub 0.8/As MODFET

Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs