NDLI: New experimental findings on hot carrier effects in sub-0.1 μm MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Balestra, F. Matsumoto, T. Tsuno, M. Nakabayashi, H. Koyanagi, M.
Copyright Year	1980
Abstract	The behaviors of the substrate current and the impact ionization rate are investigated for deep submicron devices in a wide temperature range. New important features are shown for the variations of the maximum substrate current as a function of applied biases and temperature. It is found that the gate voltage V/sub gmax/, corresponding to the maximum impact ionization current conditions, is quasi-constant as a Function of the drain bias for sub-0.1 /spl mu/m MOSFET's in the room temperature range. At low temperature, a substantial increase of V/sub gmax/ is observed when the drain voltage is reduced. It is also shown that, although a significant enhancement of hot carrier effects is observed by scaling down the devices, a strong reduction of the impact ionization rate is obtained for sub-0.1 /spl mu/m MOSFET's operated at liquid nitrogen temperature in the low drain voltage range.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	433
Ending Page	435
Page Count	3
File Size	285291
File Format	PDF
ISSN	07413106
Volume Number	16
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carrier effects MOSFET circuits Temperature distribution Impact ionization Low voltage MOS devices Nitrogen Hot carriers Degradation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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