NDLI: Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Content Provider	IEEE Xplore Digital Library
Author	Fay, P. Stevens, K. Elliot, J. Pan, N.
Copyright Year	1980
Abstract	The performance of InGaP-based pHEMTs as a function of gate length has been examined experimentally. The direct-current and microwave performance of pHEMTs with gate lengths ranging from 1.0-0.2 /spl mu/m has been evaluated. Extrinsic transconductances from 341 mS/mm for 1.0 /spl mu/m gate lengths to 456 mS/mm for 0.5 /spl mu/m gate lengths were obtained. High-speed device operation has been verified, with f/sub t/ of 93 GHz and f/sub max/ of 130 GHz for 0.2 /spl mu/m gate lengths. The dependence of DC and small-signal device parameters on gate length has been examined, and scaling effects in InGaP-based pHEMT's are examined and compared to those for AlGaAs/InGaAs/GaAs pHEMTs. High-field transport in InGaP/InGaAs heterostructures is found to be similar to that of AlGaAs/InGaAs heterostructures. The lower /spl epsiv//sub r/ of InGaP relative to AlGaAs is shown to be responsible for the early onset of short-channel effects in InGaP-based devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	141
Ending Page	143
Page Count	3
File Size	92145
File Format	PDF
ISSN	07413106
Volume Number	21
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Gallium arsenide PHEMTs MODFETs HEMTs Fabrication Gold Lithography Electrical resistance measurement Transconductance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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