NDLI: Controlling the Interface Properties of Submicrometric Nb/A– <inline-formula> <tex-math notation=TeX>$hbox{AlO}_{rm x}$</tex-math></inline-formula>

Content Provider	IEEE Xplore Digital Library
Author	Lacquaniti, V. De Leo, N. Fretto, M. Cassiago, C. Rocci, R. Sosso, A. Belogolovskii, M.
Copyright Year	2002
Abstract	Submicron Josephson devices are of a particular interest to the emerging field of quantum information, nanosized superconducting quantum interference devices (nano-SQUID) fabrication, AC voltage synthesis circuits for quantum metrology, etc. In this paper, we report on the development of our technology for producing non-hysteretic Nb/A-AlO_x-Nb four-layered junctions with a diverse range of submicron dimensions, based on the focused ion beam (FIB) sculpting technique. We observed essential modifications of the main electrical characteristics as a result of the shrinking of the junction area, and relate them to the changes of the buried Nb/Al interface. We show that the electrical parameters-versus-temperature dependence can provide information on the quality of the junction interfaces. This aspect could be useful to better control of the entire fabrication process, allowing a further large-scale integration of Josephson nanodevices with improved transport characteristics.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	1
Ending Page	4
Page Count	4
File Size	290335
File Format	PDF
ISSN	10518223
Volume Number	25
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Niobium Josephson junctions Integrated circuits Fabrication Nanoscale devices Resistance asymmetric junctions Focused Ion Beam temperature dependence Asymmetric junctions focused ion beam
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Subgap Leakage in $hbox{Nb/Al}$– $hbox{AlO}_{rm x}hbox{/Nb}$ Josephson Junctions and Run-to-Run Reproducibility: Effects of Oxidation Chamber and Film Stress

Process-Induced Variability of ${rm Nb/Al}/{rm AlO}_{rm x}/{rm Nb}$ Junctions in Superconductor Integrated Circuits and Protection Against It

Inductance of Circuit Structures for MIT LL Superconductor Electronics Fabrication Process With 8 Niobium Layers

Parametric Characterization and Macroscopic Quantum Tunneling of $hbox{Nb}/hbox{AlO}_{rm x}/hbox{Nb}$ Josephson Junctions

Analysis of the Temperature Stability of Overdamped ${hbox{Nb}}/{hbox{Al-}}{hbox{AlO}}_{x}/{hbox{Nb}}$ Josephson Junctions

300-GHz Operation of Divider Circuits Using High- $J_{c} hbox{Nb/Nb}_{x}hbox{Si}_{1-x}/hbox{Nb} $ Josephson Junctions

Fabrication of submicron Nb/AlO/sub x/-Al/Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique

Investigation of the Role of H in Fabrication-Process- Induced Variations of ${rm Nb}/{rm Al}/{rm AlO}_{x}/{rm Nb}$ Josephson Junctions

Effect of Electrical Stress on Josephson Tunneling Characteristics of ${rm Nb/Al/AlO}_{x}/{rm Nb}$ Junctions

Controlling the Interface Properties of Submicrometric Nb/A– $hbox{AlO}_{rm x}$–Nb Josephson Junctions

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