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Impact of total ionizing dose radiation testing and long-term thermal cycling on the operation of cmf20120d silicon carbide power mosfet
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hammoud, Ahmad Scheick, Leif Casey, Megan Lauenstein, Jean-Marie Scheidegger, Robert J. Patterson, Richard L. |
| Copyright Year | 2013 |
| Description | Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed. |
| File Size | 670163 |
| Page Count | 16 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140011092 |
| Archival Resource Key | ark:/13960/t6q006j8g |
| Language | English |
| Publisher Date | 2013-09-01 |
| Access Restriction | Open |
| Subject Keyword | Thermal Cycling Tests Field Effect Transistor Extreterrestrial Radiation Temperature Distribution Ionizing Radiation Field Effect Transistors Silicon Carbides Nasa Space Programs Reliability Radiation Dosage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
