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P-mosfet total dose dosimeter
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1994 |
| Description | A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak. |
| File Size | 338354 |
| Page Count | 5 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080012414 |
| Archival Resource Key | ark:/13960/t9r25vz50 |
| Language | English |
| Publisher Date | 1994-07-26 |
| Access Restriction | Open |
| Subject Keyword | Incident Radiation Electric Potential Patents Dosimeters Field Effect Transistors Radiation Dosage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
