Loading...
Please wait, while we are loading the content...
Similar Documents
The effects of thermal cycling on gallium nitride and silicon carbide semiconductor devices for aerospace use
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hammoud, Ahmad Patterson, Richard L. |
| Copyright Year | 2012 |
| Description | Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program |
| File Size | 1218098 |
| Page Count | 23 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20120012937 |
| Archival Resource Key | ark:/13960/t3dz57p36 |
| Language | English |
| Publisher Date | 2012-06-11 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Temperature Dependence Semiconductor Devices Field Effect Transistors Gallium Nitrides Electronic Packaging Irradiation Silicon Carbides Thermal Cycling Tests Reliability Analysis High Electron Mobility Transistors Radiation Dosage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
