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Silicon carbide power device performance under heavy-ion irradiation
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Topper, Alyson Casey, Megan Lauenstein, Jean-Marie Ikpe, Stanley Phan, Anthony LaBel, Ken Wilcox, Edward |
| Copyright Year | 2015 |
| Description | Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices. |
| File Size | 847688 |
| Page Count | 1 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150020905 |
| Archival Resource Key | ark:/13960/t84j5h89s |
| Language | English |
| Publisher Date | 2015-07-16 |
| Access Restriction | Open |
| Subject Keyword | Single-event Effect Total Ionizing Dose (tid) Schottky Diodes Sic Power Mosfets Radiation Hardness Assurance Degradation Radiation Hardening Radiation Effects Heavy Ions Metal Oxide Semiconductors Ion Irradiation Field Effect Transistors Single Event Upsets Silicon Carbides Failure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
