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Thermal cycling and high temperature reverse bias testing of control and irradiated gallium nitride power transistors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hammoud, Ahmad Scheick, Leif Casey, Megan Lauenstein, Jean-Marie Boomer, Kristen T. Patterson, Richard L. |
| Copyright Year | 2014 |
| Description | The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed. |
| File Size | 846602 |
| Page Count | 34 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140010370 |
| Archival Resource Key | ark:/13960/t2j72fn87 |
| Language | English |
| Publisher Date | 2014-06-17 |
| Access Restriction | Open |
| Subject Keyword | Thermal Cycling Tests Extraterrestrial Radiation Field Effect Transistor Performance Tests Field Effect Transistors Gallium Nitrides Bias Spacecraft Power Supplies Nasa Space Programs Space Missions Semiconductors Materials Temperature Effects Irradiation High Temperature Tests Reliability Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
