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Effects of thermal cycling on control and irradiated epc 2nd generation gan fets
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hammoud, Ahmad Scheick, Leif Casey, Megan Lauenstein, Jean-Marie Patterson, Richard L. |
| Copyright Year | 2013 |
| Description | The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed. |
| File Size | 2046721 |
| Page Count | 55 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140010475 |
| Archival Resource Key | ark:/13960/t3gx99m0g |
| Language | English |
| Publisher Date | 2013-11-01 |
| Access Restriction | Open |
| Subject Keyword | Field Effect Transistor Thermal Cycling Tests Extraterrestrial Radiation Space Missions Field Effect Transistors Temperature Effects Gallium Nitrides Irradiation Nasa Space Programs Manufacturing Reliability Radiation Dosage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
